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Si photodiode S2386-45K hamamatsu

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Si photodiode S2386-45K hamamatsu

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Description

Si photodiode S2386-45K hamamatsu

For visible to near IR, general-purpose photometry

Features
– High sensitivity in visible to near infrared range
– Low dark current
– High reliability
– Superior linearity

Photosensitive area 3.9 × 4.6 mm
Number of elements 1
Package Metal
Package category TO-5
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 320 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.6 A/W
Dark current (max.) 30 pA
Rise time (typ.) 5.5 μs
Terminal capacitance (typ.) 2300 pF
Noise equivalent power (typ.) 1.4×10-15 W/Hz1/2

Si photodiode S2386-45K hamamatsu