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320nm CW Laser 10mW – 100mW Max Output Power for photoluminescence PL spectroscopy on semiconductors

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320nm CW Laser 10mW – 100mW Max Output Power for photoluminescence PL spectroscopy on semiconductors

$12,500.00

320nm CW Laser 10mW – 100mW Max Output Power for photoluminescence PL spectroscopy on semiconductors. If the max output powre is 100mW, you can get any output power from 0mW- 100mW , adjust the output power with the laser switch.

Description

320nm CW Laser 10mW – 100mW Max Output Power for photoluminescence PL spectroscopy on semiconductors. If the max output powre is 100mW, you can get any output power from 0mW- 100mW , adjust the output power with the laser switch.

 

320nm CW Laser 10mW – 100mW Max Output Power for photoluminescence PL spectroscopy on semiconductors.

 

Main features for this UV 320nm diode pumped laser.

 

TEC cooled
Long life operation
Analog/TTL modulation
Collimated straight beam
High efficiency
High reliability

 

Output Wavelength: 320nm+-5nm
Output Power: 100mW
Operating Mode: CW
Spatial Mode: Near TEM00
Polarization: Linear
Beam Spot Shape: Aspect ratio<1.5:1
Pointing Stability: <0.05 mrad
Beam Diameter(1/e): Near 1.2mm
Beam Divergence(Full Angle): Near 1.0mrad
Beam Height: Near 45mm
Power Stability(rms, over 4 hours): <5%
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam Quality(M2): <2
Optimum Operating Temperature: 20~30C
Storage Temperature: 10~50C
Laser Head Dimension: Near 211(L)x88(W)x74(H) mm
Power Supply: Lab Adjustable Power Supply
Warranty: 1 Year

Temperature Stabilizing TEC
Warm Up Time <1 minute
MTTF 10,000 hrs